MMBT8050D NPN Bipolar Junction Transistor

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Discover the MMBT8050D NPN Transistor featuring a 40V voltage rating, 1.5A collector current, 350mW power dissipation, and compact TO-236 package. Explore its key features and applications in electronic switching, signal amplification, and PCB circuit designs.

₹1.00

The MMBT8050D is a compact NPN bipolar junction transistor designed for switching and amplification applications in electronic circuits. It supports a collector-emitter voltage of 40V and a maximum collector current of 1.5A, making it suitable for various low-voltage electronic designs.

Featuring a TO-236 surface-mount package, this transistor is ideal for compact PCB layouts and space-constrained applications. Its wide operating temperature range of -55°C to 150°C supports reliable operation under different environmental conditions.

Key Features

  • NPN bipolar junction transistor

  • Maximum voltage rating of 40V

  • Collector current rating of 1.5A

  • Power dissipation of 350mW

  • Compact TO-236 package

  • Wide operating temperature range

  • Suitable for switching and amplification circuits

  • Designed for surface-mount PCB assembly

Technical Specifications

Parameter Specification
Product Model MMBT8050D
Transistor Type NPN
Case/Package TO-236
Voltage Rating 40V
Current Rating 1.5A
Operating Temperature -55°C to 150°C
Power Dissipation 350mW
Mounting Type Surface Mount
Shipping Weight 0.001 kg
Shipping Dimensions 1 × 1 × 1 cm

Applications

  • Electronic switching circuits

  • Signal amplification

  • Power control circuits

  • Consumer electronic devices

  • Driver circuits

  • General-purpose electronic applications

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